红外无源定位技术研究

传统的无源定位方法大都采用多个接收机测向 ,交叉定位 ,但其测向精度低 ,难以满足实际需求。基于最小二乘法原理提出的极小化误差法 ,其定位精度大大提高 ,仿真结果表明 ,将此方法用于红外探测阵列具有良好的定位性能。     

新型半导体清洗剂的清洗工艺

报道了利用红外吸收谱、X射线光电子谱和表面张力测试仪对新型半导体清洗工艺进行研究的结果.采用DGQ系列清洗剂清洗硅片时,首先需用HF稀溶液浸泡硅片,以利于将包埋于氧化层内的金属和有机污染物去除;溶液的配比浓度由临界胶束浓度和硅片表面的污染程度确定,要确保清洗过程中溶液内部有足够的胶束存在,一般DGQ -1、DGQ-2的配比浓度在90%到98%之间;当温度接近表面活性剂溶液的浊点温度时,增溶能力最强,因而清洗液的温度定在60℃.     

Monolithically integrated HgCdTe focal plane arrays

The cost and performance of hybrid HgCdTe infrared (IR) focal plane arrays are constrained by the necessity of fabricating the detector arrays on a CdZnTe substrate. These substrates are expensive, fragile, available only in small rectangular formats, and are not a good thermal expansion match to the silicon readout integrated circuit. We discuss in this paper an IR sensor technology based on monolithically integrated IR focal plane arrays that could replace the conventional hybrid focal plane array technology. We have investigated the critical issues related to the growth of HgCdTe on Si read-out integrated circuits and the fabrication of monolithic focal plane arrays: (1) the design of Si read-out integrated circuits and focal plane array layouts; (2) the low-temperature cleaning of Si(001) wafers; (3) the growth of CdTe and HgCdTe layers on read-out integrated circuits; (4) diode creation, delineation, electrical, and interconnection; and (4) demonstration of high yield photovoltaic operation without limitation from earlier preprocessing such as substrate cleaning, molecular beam epitaxy (MBE) growth, and device fabrication. Crystallographic, optical, and electrical properties of the grown layers will be presented. Electrical properties for diodes fabricated on misoriented Si and readout integrated circuit (ROIC) substrates will be discussed. The fabrication of arrays with demonstrated I–V properties show that monolithic integration of HgCdTe-based IR focal plane arrays on Si read-out integrated circuits is feasible and could be implemented in the third generation of IR systems.     

美欧低空防御导弹发展现状

重点介绍了与空空导弹扩展有关的美欧低空防御导弹的发展现状, 给出了主要型号的系统配置和技术性能。     

总有机碳测定仪国产化及使用中若干问题的思考

总有机碳(TOC)分析仪在中国的应用越来越普及，本文就TOC分析仪在研发和应用中应注意的有关问题进行了评述。     

Direct fluorination of the polyimide matrimid® 5218: The formation kinetics and physicochemical properties of the fluorinated layers

Fluorinated polymers have a set of unique properties, including improved chemical stability and thermal stability and good barrier and membrane parameters, which are mainly defined by their surface properties. This article presents systematic data on the direct fluorination of the polyimide Matrimid® 5218, a commercially available polymer suitable for the formation of gas‐separation hollow fibers. Changing the fluorination conditions (i.e., the fluorinated mixture composition, fluorine partial pressure, and treatment duration) allows the rate of formation of the surface‐fluorinated layer over the 0.1–10 μm range to be kept under control. The physicochemical properties of modified layers (i.e., the chemical composition, formation of radicals, refractive index, IR and UV spectra, density, and surface energy) are examined. The thickness of the fluorinated layer (δ_F) depends on the fluorination duration (t): δ_F ～ t^0.5. During fluorination, hydrogen atoms are replaced with fluorine, double bonds are saturated with fluorine, and at least one CN bond in the five‐member ring is disrupted. Fluorination results in a significant increase in the polymer density, transparency in the visible and ultraviolet regions of spectra, and a reduction of the refractive index. A high concentration of long‐living radicals (up to ～5 × 10¹⁹ radicals/cm³ of the fluorinated layer) is generated under fluorination. This can be used for subsequent grafting (e.g., with acrylonitrile). © 2004 Wiley Periodicals, Inc. J Appl Polym Sci 92: 6–17, 2004     

焦平面读出电路设计中的低温应用研究

焦平面读出电路是焦平面探测器的核心部件之一,本文介绍了焦平面读出电路在低温(77 K)应用下的一些特殊的效应,以及在低温下CMOS器件的几个重要参数的计算模型,有了这些,就可以在读出电路设计阶段预先考虑这些效应,从而设计出性能优良的读出电路。     

Arsenic-doped mid-wavelength infrared HgCdTe photodiodes

The recently developed Te-rich, liquid-phase-epitaxy growth technology for low arsenic-doped mid-wavelength infrared (MWIR) HgCdTe with p-type doping concentrations <10¹⁵ cm⁻³ has enabled the fabrication of n⁺/p photodiodes using the damage associated with a boron ion implantation. The diode properties are presented and compared to similar diodes fabricated in p-HgCdTe doped with Group IBs. The attraction of the arsenic-doped diode technology is associated with the fact that the arsenic resides on the Te sublattice and is immune to the Hg interstitial fluxes that are present in the diode-formation process. This leads to minimal diode spread, limited primarily to the n⁺ region and, hence, a potential for use in really high-density infrared focal planes. At the same time, the Hg interstitials generated in the diode-formation process should purge the photodiode volume of fast diffusing species, resulting in a high-quality, diode-depletion region devoid of many Shockley-Read recombination centers. These aspects of diode formation in this material are discussed.     

发展适合我国炼油厂的汽油自动调合成套工艺技术

在对国内外汽油自动调合工艺与技术进行详细调研的基础上，指出了发展适合我国汽油自动调合成套工艺技术的必要性和紧迫性，即开发和应用适合我国汽油调合实际情况的成套自动调合工艺技术，对真正实现投资小、见效大，以及避免巨资引进不适合国情的技术带来的巨大损失，具有重大的现实意义。